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Weebit tapes out 22-nm nonvolatile resistive RAM

Weebit Nano has released to manufacturing demo chips integrating an 8-Mbit resistive RAM, or ReRAM, in a 22-nm fully depleted silicon-on-insulator process (FD-SOI) process. Weebit worked with its development partners CEA-Leti and CEA-List to scale its ReRAM technology down to 22 nm. As embedded flash is unable to scale below 28 nm, the nonvolatile ReRAM addresses the need for smaller process geometries for connected and low-power applications like IoT and edge AI.

Along with an 8-Mbit ReRAM array, the embedded ReRAM module includes control logic, decoders, I/Os, and error correcting code. Weebit’s ReRAM also withstands harsh environmental conditions, such as high temperature, radiation, and electromagnetic fields. This makes it suitable for automotive, medical, and industrial use cases. Demo chips comprise a full subsystem for embedded applications, comprising the ReRAM module, a RISC-V microcontroller, system interfaces, memory, and peripherals.

“FD-SOI technology provides high performance with low voltages and low leakage to enable devices to operate at higher frequencies with better energy efficiency,” said Olivier Faynot, head of the Silicon Component Division of CEA-Leti. “It also enables easier integration of additional features such as connectivity and security. With Weebit ReRAM available on this process, the industry will have a highly efficient and robust NVM option for their future product innovations.”

Weebit Nano

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